Syllabus

 

EE 5736                               MOSFET Devices and Circuits                        Fall 2003

 

Time and Place:         6:30-9:00 PM  Shepard 19

 

Instructor:      Prof. David Crouse      

                        Office T614

                        Phone (212) 650-5330

                        dcrouse@ccny.cuny.edu

 

Office Hours:  3:30-4:50 pm   Tuesday and  3:30-4:50 pm Thursday or by appointment

 

Required                     MOSFET Theory and Design

Texts:                         by R. M. Warner, Jr. and B. L. Grung              

 

Reserved                    Field Effect Devices   

Texts:                         by Robert F. Pierret

                                    Volume IV of the Modular Series on Solid State Devices

                       

                                    CMOS Circuit Design, Layout, and Simulation

                                    by R. Jacob Baker, Harry W. Li, David E. Boyce

 

Course Description  Physical description of MOS device operating characteristics. MOS transistors; theory, switching properties, noise, complementary symmetry. MOS logic circuits and memory design. Charge coupled devices.   3 hr./wk.; 3 cr.

 

Prerequisite:    EE 5454  Physical Electronics I

 

Course Webpage:      http://www-ee.engr.ccny.cuny.edu/www/web/crouse/crouse.html

 

Tentative

Exam Schedule:         Exam 1             To be determined        

                                    Exam 2             To be determined

                                    Cumulative Final           To be determined

 

Grade Evaluation:      Homework       30%

                                    Exam 1 20%
                        Project             20%

                                    Final                 30%

 

Homework:                 Approximately 4 homework assignments will be given throughout the semester in a fairly regular fashion.  Homework assignments will be accepted up to one week late with a 10 point (out of 100) reduction.   Homework assignments that are later than one week will not be accepted.

                                         Tentative Course Outline

 

Week

Topics

Reference Material

1

Introduction to Solid State Devices

Warner Chap. 1

2

Field Effect Devices
    J-FET, MESFET, MOSFET

Warner Chap. 1

Notes

 

3-4

Introduction to MOSFET Theory

   

Warner Chap. 1

5-6

MOS Capacitor

Warner Chap. 2

Exam 1

Covering week 1-6 material

 

7-8

MOS Capacitor Modeling

Warner Chap. 3

9

Improved MOSFET Theory

Warner Chap. 4

10

MOSFET modeling:  Spice Models

Warner Chap. 5

11

MOSFET-BJT Comparison

Warner Chap. 6

Exam2

Covering week 7-11 material

 

12

CMOS fundamentals

Baker, Notes

13-15

CMOS circuits

Baker, Notes

16

Current technology

Notes

Final

Cumulative final covering all topics covered in course.