Aidong Shen
Assistant Professor
Department of Electrical Engineering

• Ph. D., Applied Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, 1992
• B. S., Physics, Xiamen University, 1987

Areas of Interest:
Molecular beam epitaxy, semiconductor materials and devices

Contact:
Office: ST-543
Tel: (212) 650-8376
Fax: (212) 650-6107
E-mail: aidong@sci.ccny.cuny.edu

Address:
Department of Electrical Engineering
The City College of City University of New York
Convent Avenue at 138th Street
New York, NY 10031

For more information:
Visit Prof. Shen's Home Page

• A. Shen, H. Lu, W. Charles, I. Yokomizo, M. C. Tamargo, K. Franz, C. Gmachl, S.K. Zhang, X. Zhou, R. R. Alfano, and H. C. Liu, “Intersubband absorption in CdSe/ZnCdMgSe self-assembled quantum dots multi-layers”, Appl. Phys. Lett. 90, 071910 (2007).
• H. Lu, A. Shen, W. Charles, I. Yokomizo, M. C. Tamargo, K. Franz, C. Gmachl, and M. Munoz, “Optical Characterization of intersubband transitions of ZnCdSe/ZnCdMgSe multiple quantum well structures characterized by contactless electroreflectance”, Appl. Phys. Lett. 89, 241921 (2006).
• H. Lu, A. Shen, M. C. Tamargo, C. Y. Song, and H. C. Liu, S.K. Zhang, R.R. Alfano, M. Munoz, “Midinfrared intersubband absorption in ZnCdSe/ZnCdMgSe multiple quantum well structures”, Appl. Phys. Lett. 89, 131903(2006).
• M. N. Perez-Paz, H. Lu, A. Shen, F. Jean Mary, D. Akins, and M. C. Tamargo, “Magnesium effects on CdSe Self-Assembled Quantum Dot formation on ZnCdMgSe Layers”, J. Crystal Growth 294, 296(2006).
• H. C. Liu, R. Dudek, A. Shen, E. Dupont, C. Y. Song, Z. R. Wasilewski, and M. Buchanan, “High absorption (>90%) quantum well infrared photodetectors”, Appl. Phys. Lett. 79, 4237(2001)
• A. Shen, H. C. Liu, M. Gao, E. Dupont, M. Buchanan, J. Ehret, G. J. Brown, and F. Szmulowicz, “Resonant cavity enhanced p-type GaAs/AlGaAs quantum well infrared photodetectors”, Appl. Phys. Lett., 77, 2400(2000).
• H. C. Liu, C. Y. Song, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan, “GaAs/AlGaAs quantum well photodetector for visible and middle infrared dual-band detection”, Appl. Phys. Lett. 77, 2437(2000).
• F. Szmulowicz, A. Shen, H. C. Liu, G. J. Brown, Z. R. Wasilewski, and M. Buchanan, “Temperature dependence of photoresponse of p-type GaAs/AlGaAs multiple-quantum wells - theory and experiment”, Phys. Rev. B 61, 13798(2000).
• A. Shen, H. C. Liu, F. Szmulowicz, M. Buchanan, M. Gao, G. J. Brown, and J. Ehret, “Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors”, J. Appl. Phys. 86, 5232 (1999).
• Beschoten, P.A. Crowell, I. Malajovich, D.D. Awschalom, F. Matsukura, A. Shen, and H. Ohno, “Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga,Mn)As”, Phys. Rev. Lett. 83, 3073(1999).
• A. Shen, F. Matsukura, S.P. Guo, Y. Sugawara, H. Ohno, M. Tani, H. Abe, and H.C. Liu, “Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As”, J. Crystal Growth 202, 679(1999).
• S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, “InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates”, J. Crystal Growth 202, 684(1999).
• A. Shen, H. Ohno, F. Matsukura, H.C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno, “Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As”, Physica B 251, 809(1998).
• F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara, “Transport properties and origin of ferromagnetism in (Ga,Mn)As”, Phys. Rev. B 57, R2037(1998).
• A. Shen, Y. Horikoshi, H. Ohno, and S. P. Guo, “Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure”, Appl. Phys. Lett., 71, 1540(1997).
• A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, N. Akiba, T. Kuroiwa, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, “Epitaxy of (Ga,Mn)As, a new diluted magnetic semiconductor based on GaAs”, J. Crystal Growth, 176, 1069(1997).
• H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and Y. Iye, "(Ga,Mn)As: a new diluted magnetic semiconductor based on GaAs", Appl. Phys. Lett. 69, 363(1996).